The IXBH32N300HV is a high-voltage BIMOSFET transistor designed for switched-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It is packaged in a TO-247HV case with a collector tab and weighs 6 g. The device has a maximum collector-emitter voltage rating of 3000 V and a continuous collector current of 32 A at 110°C. Its collector-emitter saturation voltage is 2.8 V to 3.2 V at 32 A and 15 V gate voltage. Thermal resistance from junction to case is 0.21 °C/W. The transistor meets AEC-Q200 qualification and is RoHS compliant. It features low gate drive requirements, high power density, and a free intrinsic body diode with a forward voltage of 2.1 V at 32 A. Maximum junction temperature is 150°C. The TO-247HV package requires a mounting torque of 1.13 Nm (10 lb.in.).
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBH32N300HV |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 3000 volts |
