Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
Littelfuse, Inc. | |
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Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
Product Number | IXFK170N20T |
Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
Polarity | N-Channel |
V(BR)DSS | 200 volts |
IDSS | 170000 milliamps |