The IXFK170N20T is an N-channel enhancement mode power MOSFET for high-power switching applications. Housed in a TO-264 package, it measures 26.16 mm in length, 19.96 mm in width, and 5.13 mm in height, weighing 10 g. It has a drain-source breakdown voltage of 200 V and continuous drain current of 170 A at 25°C. On-resistance is 11 mΩ at VGS = 10 V and ID = 60 A. The device supports an avalanche energy of 3 J, with a reverse recovery time of 200 ns and a maximum power dissipation of 1150 W. Thermal resistance from junction to case is 0.13 °C/W, and the operating junction temperature range is -55°C to 175°C. Mounting torque is 1.13 Nm.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK170N20T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
