The IXDP20N60BD1 is a 600 V NPT IGBT with a maximum continuous collector current of 32 A at 25°C and a collector-emitter saturation voltage of 2.2 V typ. It includes an integrated ultra-fast diode with a forward current rating of 20 A. The device is packaged in a TO-220 AB case with dimensions of 16.07 mm x 10.36 mm x 6.88 mm and weighs 2 g. Thermal resistance from junction to case is 0.9 K/W for the IGBT and 2.5 K/W for the diode. It supports clamped inductive load switching with a RBSOA of 60 A at 125°C and has a typical turn-off time of 55 ns under specified conditions. The component is rated for junction temperatures from -55°C to 150°C and meets international standard package specifications.
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXDP20N60BD1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDP20N60BD1 |
| VCES | 600 volts |
