The IXBT42N170 is a high-voltage BIMOSFET transistor designed for switched-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It is packaged in a TO-268 case, weighing 4 g, with a maximum collector-emitter voltage of 1700 V and a continuous collector current rating of 42 A at 90°C. The device has a maximum collector-emitter saturation voltage of 2.8 V at 25°C and 2.7 V at 125°C, with a thermal resistance from junction to case of 0.25 °C/W. It operates over a junction temperature range of -55°C to 150°C and features low conduction losses, low gate drive requirements, and high power density.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Insulated Gate Bipolar Transistor, Product overview: IXBT42N170 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBT42N170 can be used for catalog matching and distributor lookup.
TRANSISTOR, 1.7KV, 80A, TO-268 ROHS COMPLIANT: YES
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors |
| Product Number | IXBT42N170 | 279-IXBT42N170 | 29AK0378 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs | IGBT Transistor | Transistor, 1.7Kv, 80A, To-268 Rohs Compliant Littelfuse |
| VCES | 1700 volts |
