The IXFH80N65X2-4 is an N-channel enhancement mode Power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247-4L case with a weight of 6 g and features a drain-source voltage rating of 650 V, continuous drain current of 80 A at 25°C, and drain-source on-resistance of 38 mΩ maximum. The device is avalanche rated with an energy rating of 3 J and has a maximum junction temperature of 150°C. Mounting torque is specified at 1.13 Nm (10 lb.in). The part meets IEC 60286-3 specifications for soldering and is RoHS compliant. Its low package inductance and fast intrinsic diode enhance switching performance and reduce EMI.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH80N65X2-4 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
