The IXFH13N80 is an N-channel enhancement mode MOSFET designed for switched-mode power supplies, DC-DC converters, and motor control applications. It is packaged in a TO-247 AD case, measuring 20.80 to 21.46 mm in width and 19.81 to 20.32 mm in length. The device has a drain-source breakdown voltage of 800 V, a continuous drain current of 13 A at 25°C, and a maximum on-resistance of 0.80 Ω at 10 V gate-source voltage. It supports an unclamped inductive switching energy of 30 mJ and a peak pulse drain current of 52 A. The gate-source threshold voltage ranges from 2.0 V to 4.5 V. Thermal resistance from junction to case is 0.42 K/W, and the operating junction temperature range is -55°C to +150°C. The device features a fast intrinsic rectifier, low package inductance, and an isolated mounting screw hole.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH13N80 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFH13N80 |
| Polarity | N-Channel |
