Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB100N50P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFB100N50P is an N-channel enhancement mode power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and uninterruptible power supplies. It is housed in a PLUS264 package and rated for a drain-source voltage of 500 V, continuous drain current of 100 A at 25°C, and peak pulse current of 250 A. The device features a maximum on-resistance of 49 mΩ, an avalanche energy rating of 5 J, and a fast intrinsic rectifier with reverse recovery time of 250 ns. It meets avalanche rating and low package inductance requirements, with a junction temperature range of -55°C to +150°C. The part is rated for a maximum lead temperature of 300°C during soldering and has a thermal resistance from junction to case of 0.066 °C/W.

Datasheet Summary
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The IXFB100N50P is an N-channel enhancement mode power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and uninterruptible power supplies. It is housed in a PLUS264 package and rated for a drain-source voltage of 500 V, continuous drain current of 100 A at 25°C, and peak pulse current of 250 A. The device features a maximum on-resistance of 49 mΩ, an avalanche energy rating of 5 J, and a fast intrinsic rectifier with reverse recovery time of 250 ns. It meets avalanche rating and low package inductance requirements, with a junction temperature range of -55°C to +150°C. The part is rated for a maximum lead temperature of 300°C during soldering and has a thermal resistance from junction to case of 0.066 °C/W.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFB100N50P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFB100N50P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB100N50P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 100A 500V 0.049ohm MOSFET Transistor
278-IXFB100N50P
N-Channel 100A 500V 0.049ohm MOSFET Transistor 278-IXFB100N50P
Power Field-Effect Transistor, 100A I(D), 500V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN Product overview: IXFB100N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100A, 500V, 0.049ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100A, 500V, 0.049ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB100N50P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 100A I(D), 500V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN Product overview: IXFB100N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100A, 500V, 0.049ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100A, 500V, 0.049ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB100N50P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFB100N50P 278-IXFB100N50P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 100A 500V 0.049ohm MOSFET Transistor
Polarity N-Channel
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