The IXFA22N60P3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is housed in a TO-263 package and rated for a drain-source voltage of 600 V, with a continuous drain current of 22 A at 25°C. The device features a maximum RDS(on) of 390 mΩ at 10 V gate-source voltage and 11 A drain current, an avalanche energy rating of 400 mJ, and a fast intrinsic rectifier with a reverse recovery charge of 0.8 μC. It is avalanche-rated, has low gate charge and package inductance, and operates with a junction temperature range of -55°C to 150°C. The product meets AEC-Q200 qualification standards.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA22N60P3 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
