The IXFA270N06T3 is an N-channel enhancement mode Power MOSFET with a 60V drain-source breakdown voltage and a 270A continuous drain current rating at 25°C, housed in a TO-263 AA package. It features a maximum on-resistance of 3.1 mΩ at 10V gate drive and 100A drain current, an avalanche energy rating of 1.5 J, and operates up to a 175°C junction temperature. The device includes a fast intrinsic rectifier and is rated for 480W power dissipation at 25°C case temperature. It meets the AEC-Q200 automotive qualification standard. The TO-263 AA package weighs 2.5 g and supports a mounting force of 2.2 to 14.6 lb (10 to 65 N).
The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode power conversion applications. These MOSFETs can withstand a junction temperature up to 175°C and are avalanche rated at high avalanche current levels, ensuring device ruggedness in demanding industrial applications. Due to their high-current carrying capability, paralleling multiple devices may not be necessary, thereby simplifying the power system and improving its reliability at the same time. In addition, the fast intrinsic body diode helps achieve high efficiency, especially during high-speed switching. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated Fast body diode 175°C operating temperature International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA270N06T3 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen3 - IXFA270N06T3 |
| Polarity | N-Channel |
