The IXFH120N25T is an N-channel enhancement mode power MOSFET designed for high-current switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-247 case, weighing 6 g, with a drain-source voltage rating of 250 V and a continuous drain current of 120 A at 25°C. The device features a maximum on-state resistance of 23 mΩ at Vₓ₍ = 10 V and Iₓ = 60 A, and is avalanche-rated with an energy rating of 500 mJ. It includes a fast intrinsic rectifier and operates with a junction temperature range of -55°C to 150°C. The part meets industry standards for international packaging and is rated for low thermal resistance of 0.21 °C/W from case to sink.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH120N25T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
