- Trained on our vast library of engineering resources.

Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH120N25T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH120N25T - Littelfuse, Inc.
Chicago, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFH120N25T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH120N25T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH120N25T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
V(BR)DSS 250 volts
IDSS 120000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA4N60P3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 4000 milliamps
View Details
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK80N60P3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 80000 milliamps
View Details
2 suppliers
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK40N90P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 900 volts
IDSS 40000 milliamps
View Details