The IXBH2N250 is a high-voltage Bipolar MOS transistor designed for switched-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It is packaged in a TO-247 case with a weight of 6 g and features an integrated anti-parallel diode. The device has a collector-emitter breakdown voltage of 2500 V, a continuous collector current rating of 2 A at 110°C, and a peak collector current of 13 A for 1 ms. Its collector-emitter saturation voltage is 3.15 V to 3.80 V at 2 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 3.90 °C/W. The part meets international standard packaging and operates over a junction temperature range of -55 °C to 150 °C. It is qualified to AEC-Q200 and RoHS standards.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
IGBT Transistor, 250V, High Speed Product overview: IXBH2N250 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 250V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBH2N250 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBH2N250 | 279-IXBH2N250 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs | 250V IGBT Transistor |
| VCES | 2500 volts |
