Littelfuse, Inc. 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA4N85X

Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Datasheet
Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA4N85X - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFA4N85X
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA4N85X
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFA4N85X
Product Name 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 190106882 - Radwell International
Fuji Electric Corp. of America
View Details
Single FETs, MOSFETs - UJ4SC075011B7S - ODG (Origin Data Global)
Specs
Transistor Type JFET; MOSFET; SiCFET (Cascode SiCJFET)
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
View Details
 - LM5106MM/NOPB - Rochester Electronics
Texas Instruments
Specs
Transistor Type MOSFET
Package Type VSSOP10
View Details
Transistor - 343728 - Radwell International
Allen-Bradley / Rockwell Automation
View Details