The IXFA4N85X is an N-channel enhancement mode MOSFET rated for 850 V drain-source voltage and 3.5 A continuous drain current, housed in a TO-263 package measuring 2.50 g. It features a maximum on-state resistance of 2.5 Ω at 10 V gate-source voltage and 2 A drain current, with an avalanche energy rating of 125 mJ and a drain-source diode reverse recovery time of 170 ns. The device is avalanche rated, supports a junction temperature range of -55 °C to 150 °C, and complies with international standard packages. It is designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA4N85X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
