Littelfuse, Inc. 600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs IXFH80N60X2A

Description
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Datasheet
Description
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs - IXFH80N60X2A - Littelfuse, Inc.
Rosemont, IL, United States
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs
IXFH80N60X2A
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs IXFH80N60X2A
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance

With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFH80N60X2A
Product Name 600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs
Package Type TO-247; TO-247
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1826936 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type TO-252 (DPAK); To-252 (dpak)
View Details
1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor - QPD1028L - Qorvo
Specs
Transistor Technology / Material 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
Package Type NI-780
Transistor Grade / Operating Range Military
View Details
2 suppliers