The IXFH80N60X2A is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is housed in a TO-247 package, weighs 6 g, and is rated for a drain-source voltage of 600 V and a continuous drain current of 80 A at 25°C. The device has a maximum on-resistance of 38 mΩ at 10 V gate-source voltage and 40 A drain current, and is avalanche rated with an energy rating of 3 J at 25°C. It features a fast intrinsic diode with a reverse recovery time of 200 ns and repetitive peak surge current of 320 A. The MOSFET is AEC-Q101 qualified, with an operating junction temperature range of -55°C to 150°C and a maximum lead temperature for soldering of 260°C for 10 seconds. It has low package inductance and high power density.
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH80N60X2A |
| Product Name | 600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs |
| Package Type | TO-247; TO-247 |
