Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: Very High Voltage - IXBF28N300 IXBF28N300

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
Datasheet
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The IXBF28N300 is a high-voltage BiMOSFET transistor designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It features an ISOPLUS i4-Pak package, a 3000 V collector-emitter blocking voltage, and a continuous collector current rating of 28 A at 90°C. The device has a low saturation voltage of 2.3 V to 2.7 V at 25°C and 2.8 V at 125°C, a 4000 V~ electrical isolation rating, and a thermal resistance from junction to case of 0.58 °C/W. Its silicon chip on direct-copper bond substrate supports high power density and low gate drive requirements. The operating junction temperature range is -55°C to 150°C, and its isolated mounting tab enables direct heatsinking. The part meets IEC 60286-3 for soldering thermal resistance and is rated for a maximum lead temperature of 300°C during soldering.

Datasheet Summary
Powered by GS/AI

The IXBF28N300 is a high-voltage BiMOSFET transistor designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It features an ISOPLUS i4-Pak package, a 3000 V collector-emitter blocking voltage, and a continuous collector current rating of 28 A at 90°C. The device has a low saturation voltage of 2.3 V to 2.7 V at 25°C and 2.8 V at 125°C, a 4000 V~ electrical isolation rating, and a thermal resistance from junction to case of 0.58 °C/W. Its silicon chip on direct-copper bond substrate supports high power density and low gate drive requirements. The operating junction temperature range is -55°C to 150°C, and its isolated mounting tab enables direct heatsinking. The part meets IEC 60286-3 for soldering thermal resistance and is rated for a maximum lead temperature of 300°C during soldering.

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Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: Very High Voltage - IXBF28N300 - IXBF28N300 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: Very High Voltage - IXBF28N300
IXBF28N300
Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: Very High Voltage - IXBF28N300 IXBF28N300
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation

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Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBF28N300
Product Name Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: Very High Voltage - IXBF28N300
VCES 3000 volts
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