- Trained on our vast library of engineering resources.

Littelfuse, Inc. 600V - 700V Power MOSFETs with HiPerFET™ Options IXFA34N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 700V Power MOSFETs with HiPerFET™ Options - IXFA34N65X2 - Littelfuse, Inc.
Chicago, IL, United States
600V - 700V Power MOSFETs with HiPerFET™ Options
IXFA34N65X2
600V - 700V Power MOSFETs with HiPerFET™ Options IXFA34N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA34N65X2
Product Name 600V - 700V Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 34000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFB70N100X - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1000 volts
IDSS 70000 milliamps
View Details
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH12N100P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1000 volts
IDSS 12000 milliamps
View Details
2 suppliers
200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH30N50Q3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 500 volts
IDSS 30000 milliamps
View Details
3 suppliers
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH75N10Q - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 75000 milliamps
View Details