IXFH23N80Q is an N-channel enhancement mode Power MOSFET designed for high-voltage switching applications, rated for 800 V drain-source breakdown voltage and 23 A continuous drain current. It is packaged in a TO-247 AD case, measuring 20.80 to 21.46 mm in length, with a mounting torque of 1.13 Nm. The device features a low on-resistance of 0.42 Ω at 25°C, avalanche energy rating of 1.5 J, and a fast intrinsic body diode with reverse recovery charge of 1 µC. It meets UL 94 V-0 flammability standards and is rated for junction temperatures from -55°C to 150°C. The gate charge is 26 nC, and thermal resistance from junction to case is 0.25 K/W.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH23N80Q |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
