The IXFA102N15T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-263 case with dimensions of 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width. The device has a drain-source voltage rating of 150 V, a continuous drain current of 102 A at 25°C, and a maximum drain-source on-resistance of 18 mΩ at VGS = 10 V and ID = 51 A. It is avalanche rated with an energy rating of 750 mJ and features a fast intrinsic body diode with a reverse recovery time of 120 ns. The maximum junction temperature is 175°C, and thermal resistance from junction to case is 0.33°C/W. The part meets international packaging standards and is designed for high power density and easy mounting.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA102N15T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
