The IXBH5N160G is a high-voltage BiMOSFET designed for switched-mode power supplies, DC-DC converters, and resonant converters, offering a 1600 V blocking voltage and a continuous collector current of 5.7 A at 25°C. It features a low saturation voltage of 4.9 V at 3 A, reverse conduction capability with a forward voltage of 6 V, and fast switching characterized by a turn-off delay time of 70 ns. Housed in a TO-247 AD package, it measures 19.81 to 20.32 mm in length and 20.80 to 21.46 mm in width, with a maximum power dissipation of 68 W at 25°C and a thermal resistance of 1.85 K/W junction-to-case. The device supports a gate-emitter voltage of ±20 V and operates over a junction temperature range of -55°C to 125°C, with a mounting torque of 1.2 Nm for the TO-247 package. Its epoxy molding compound meets UL94V-0 standards.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Insulated Gate Bipolar Transistor, Product overview: IXBH5N160G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBH5N160G can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBH5N160G | 279-IXBH5N160G |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs | IGBT Transistor |
| VCES | 1600 volts |
