The IXFH26N60Q is an N-channel enhancement mode Power MOSFET designed for high-voltage switching applications, featuring a 600 V drain-source breakdown voltage and a continuous drain current of 26 A at 25°C. It is packaged in a TO-247 AD case with a weight of 6 g and mounting torque of 1.13 Nm. The device has a typical on-resistance of 0.25 Ω at 10 V gate voltage and a gate charge of 150 to 200 nC. It is avalanche rated with an energy absorption capability of 1.5 J at 25°C and supports a peak pulse current of 104 A. The silicon device meets UL 94 V-0 flammability standards and is rated for operation from -55°C to +150°C junction temperature.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH26N60Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH26N60Q |
| Polarity | N-Channel |
