Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA6N120P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFA6N120P is an N-channel enhancement mode Power MOSFET with a 1200 V drain-source breakdown voltage and a continuous drain current of 6 A at 25°C, housed in a TO-263 AA package. It features an avalanche-rated design, a fast intrinsic diode with a reverse recovery time of 300 ns, and a maximum on-state resistance of 2.75 Ω at 10 V gate-source voltage. The device has a dynamic dv/dt rating of 10 V/ns, low gate charge of 92 nC, and low drain-to-source capacitance of 150 pF. It is rated for a junction temperature range of -55°C to +150°C and meets RoHS standards. The TO-263 package provides low package inductance and low drain-to-tab capacitance for high-speed switching applications.

Datasheet Summary
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The IXFA6N120P is an N-channel enhancement mode Power MOSFET with a 1200 V drain-source breakdown voltage and a continuous drain current of 6 A at 25°C, housed in a TO-263 AA package. It features an avalanche-rated design, a fast intrinsic diode with a reverse recovery time of 300 ns, and a maximum on-state resistance of 2.75 Ω at 10 V gate-source voltage. The device has a dynamic dv/dt rating of 10 V/ns, low gate charge of 92 nC, and low drain-to-source capacitance of 150 pF. It is rated for a junction temperature range of -55°C to +150°C and meets RoHS standards. The TO-263 package provides low package inductance and low drain-to-tab capacitance for high-speed switching applications.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA6N120P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFA6N120P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA6N120P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
1200V 6A 0.0024ohm MOSFET Transistor
278-IXFA6N120P
1200V 6A 0.0024ohm MOSFET Transistor 278-IXFA6N120P
N-Ch MOSFET, 1200V, 6A, 0.0024ohm, TO-263AA Product overview: IXFA6N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 6A, 0.0024ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 6A, 0.0024ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA6N120P can be used for catalog matching and distributor lookup.

N-Ch MOSFET, 1200V, 6A, 0.0024ohm, TO-263AA Product overview: IXFA6N120P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 6A, 0.0024ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 6A, 0.0024ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA6N120P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA6N120P 278-IXFA6N120P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) 1200V 6A 0.0024ohm MOSFET Transistor
Polarity N-Channel
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