The IXFH12N90 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as DC-DC converters, switched-mode power supplies, and AC motor control. It is packaged in a TO-247 AD case with a drain tab, measuring 20.80 mm to 21.46 mm in length and 15.75 mm to 16.26 mm in width. It has a drain-source breakdown voltage of 900 V, a continuous drain current of 12 A, and a maximum RDS(on) of 0.9 Ω at 25°C. The device supports unclamped inductive switching and features low gate charge and package inductance. It is rated for operation from -55°C to 150°C junction temperature and meets the AEC-Q200 automotive standard. The mounting torque is 1.13 Nm (10 lb.in.).
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH12N90 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFH12N90 |
| Polarity | N-Channel |
