Littelfuse, Inc. 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBT42N300HV

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
Datasheet
Datasheet Summary
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The IXBT42N300HV is a high-voltage BiMOSFET transistor designed for applications such as laser generators, capacitor discharge circuits, and protection circuits. It is packaged in a TO-268HV, weighing 4 g, with a collector-emitter blocking voltage of 3000 V and a continuous collector current of 42 A at 110°C. The device has a collector-emitter saturation voltage of 2.5 V to 3.0 V at 42 A and 15 V gate-emitter voltage, and a maximum junction temperature of 150°C. It features a reverse-bias safe operating area up to 1500 V and a forward-bias safe operating area with clamped inductive load capability. The thermal resistance from junction to case is 0.25 °C/W. The part meets AEC-Q200 and RoHS standards and includes an integrated intrinsic diode for commutation protection. The TO-247HV variant shares identical electrical characteristics but weighs 6 g and has a slightly lower thermal resistance of 0.21 °C/W.

Datasheet Summary
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The IXBT42N300HV is a high-voltage BiMOSFET transistor designed for applications such as laser generators, capacitor discharge circuits, and protection circuits. It is packaged in a TO-268HV, weighing 4 g, with a collector-emitter blocking voltage of 3000 V and a continuous collector current of 42 A at 110°C. The device has a collector-emitter saturation voltage of 2.5 V to 3.0 V at 42 A and 15 V gate-emitter voltage, and a maximum junction temperature of 150°C. It features a reverse-bias safe operating area up to 1500 V and a forward-bias safe operating area with clamped inductive load capability. The thermal resistance from junction to case is 0.25 °C/W. The part meets AEC-Q200 and RoHS standards and includes an integrated intrinsic diode for commutation protection. The TO-247HV variant shares identical electrical characteristics but weighs 6 g and has a slightly lower thermal resistance of 0.21 °C/W.

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2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs - IXBT42N300HV - Littelfuse, Inc.
Rosemont, IL, United States
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs
IXBT42N300HV
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBT42N300HV
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation

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Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBT42N300HV
Product Name 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs
VCES 3000 volts
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