The IXFH34N60X2A is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and an operating junction temperature range of -55°C to +150°C. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 34 A at 25°C, and a maximum on-resistance of 100 mΩ at 10 V gate voltage. It is avalanche rated, features a fast intrinsic diode with a reverse recovery charge of 1.2 µC, and meets AEC-Q101 automotive qualification standards. The package has low inductance and thermal resistance of 0.23 °C/W from junction to case.
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH34N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH34N60X2A |
| Product Name | 600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs |
| Package Type | TO-247; TO-247 |
