IXFH18N60X is an N-channel enhancement mode power MOSFET for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6.0 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 18 A at 25°C, and a maximum on-resistance of 230 mΩ at 10 V gate voltage. It is avalanche rated with an energy rating of 500 mJ and features a fast intrinsic diode with a forward voltage of 1.4 V. Thermal resistance from junction to case is 0.21 °C/W. The part meets international standard package requirements and is designed for high power density applications.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH18N60X |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X-Class - IXFH18N60X |
| Polarity | N-Channel |
