IXFH50N60X is an N-channel enhancement mode power MOSFET in a TO-247 package, rated for 600 V drain-to-source voltage and 50 A continuous drain current, suitable for switch-mode power supplies, DC-DC converters, and motor drives. It has a maximum on-resistance of 73 mΩ at VGS = 10 V and ID = 25 A. The device is avalanche rated with 2 J single-pulse energy and 50 V/ns dv/dt capability. It features a fast intrinsic diode with a forward voltage of 1.4 V and reverse recovery charge of 1.6 μC. Junction-to-case thermal resistance is 0.25 °C/W. Maximum junction temperature is 150 °C, and lead soldering temperature is 260 °C for 10 seconds. It meets AEC-Q200 and RoHS standards.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH50N60X |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X-Class - IXFH50N60X |
| Polarity | N-Channel |
