The IXFB40N110P is an N-channel enhancement mode MOSFET designed for high-voltage switching applications, including switched-mode power supplies, pulse power circuits, and DC-AC inverters. It is packaged in a PLUS264 case and weighs 10 g. The device has a drain-source breakdown voltage of 1100 V, a continuous drain current of 40 A at 25°C, and a maximum pulsed drain current of 100 A. It features a low on-state resistance of 260 mΩ, an avalanche energy rating of 2 J, and an unclamped inductive switching capability. The integrated fast intrinsic diode exhibits a reverse recovery time of 300 ns and a forward voltage of 1.5 V. The package supports clip or spring mounting, offers low inductance, and is rated for junction temperatures from -55°C to 150°C. The device meets RoHS standards and is designed for high power density and space savings.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB40N110P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
