Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFK120N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFK120N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-to-source voltage and 120 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is available in TO-264 and PLUS247 packages, with a maximum junction temperature of 150 °C and a thermal resistance from junction to case of 0.10 °C/W. The device features a low on-resistance of 24 mΩ at 10 V gate voltage and 60 A drain current, an avalanche energy rating of 3.5 J, and a transient dv/dt capability of 50 V/ns. It is avalanche rated, has a fast intrinsic diode, and complies with industry-standard packages. The product is designed for high power density and easy mounting.

Datasheet Summary
Powered by GS/AI

The IXFK120N65X2 is an N-channel enhancement mode MOSFET rated for 650 V drain-to-source voltage and 120 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is available in TO-264 and PLUS247 packages, with a maximum junction temperature of 150 °C and a thermal resistance from junction to case of 0.10 °C/W. The device features a low on-resistance of 24 mΩ at 10 V gate voltage and 60 A drain current, an avalanche energy rating of 3.5 J, and a transient dv/dt capability of 50 V/ns. It is avalanche rated, has a fast intrinsic diode, and complies with industry-standard packages. The product is designed for high power density and easy mounting.

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFK120N65X2 - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFK120N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXFK120N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFK120N65X2
MOSFET Transistor 278-IXFK120N65X2
Power Field-Effect Transistor, Product overview: IXFK120N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK120N65X2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFK120N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK120N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK120N65X2 278-IXFK120N65X2
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor
Polarity N-Channel
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