FDM15-06KC5 is a 600 V N-channel enhancement mode MOSFET with a drain current rating of 15 A at 25 °C and a maximum on-state resistance of 165 mΩ, designed for buck and boost topologies in switched-mode power supplies, UPS, and PFC applications. It features an ISOPLUS i4™ package with an electrically isolated back surface rated for 2500 V, and a thermal resistance from junction to case of 1.1 K/W. The device integrates a Fast CoolMOS™ 4th generation chip on a direct-copper-bond substrate and a HiPerDyn™ FRED diode for enhanced high-frequency performance. It is avalanche-rated for unclamped inductive switching with a dV/dt ruggedness of 50 V/ns and a single pulse avalanche energy rating of 522 mJ. The part meets AEC-Q200 qualification and is RoHS compliant.
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | FDM15-06KC5 |
| Product Name | 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations |
| Polarity | N-Channel |
