IXBT22N300HV is a 3000 V, 22 A BiMOSFET IGBT for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, and capacitor discharge circuits. It is packaged in a TO-268HV case weighing 4 g. The device has a collector-emitter breakdown voltage of 3000 V, a saturation voltage of 2.2 to 2.7 V at 22 A and 15 V gate drive, and a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.43 °C/W. It meets the AEC-Q200 qualification standard and features a low gate drive requirement, high power density, and an integrated reverse diode with a forward voltage of 2.7 V at 22 A. The device supports clamped inductive switching up to 1500 V and has a peak current capability of 190 A for 1 ms pulses.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBT22N300HV |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 3000 volts |
