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Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH50N50P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
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300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH50N50P3 - Littelfuse, Inc.
Chicago, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH50N50P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH50N50P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site Datasheet
 - 8024385P - RS Components, Ltd.
Corby, Northants, United Kingdom
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density Channel Type = N Maximum Continuous Drain Current = 50 A Maximum Drain Source Voltage = 500 V Maximum Drain Source Resistance = 125 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

The IXYS Q3 class of HiperFETâ„¢ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density
Channel Type = N
Maximum Continuous Drain Current = 50 A
Maximum Drain Source Voltage = 500 V
Maximum Drain Source Resistance = 125 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 8024385 - RS Components, Ltd.
Corby, Northants, United Kingdom
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density Channel Type = N Maximum Continuous Drain Current = 50 A Maximum Drain Source Voltage = 500 V Maximum Drain Source Resistance = 125 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single

The IXYS Q3 class of HiperFETâ„¢ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode. Low RDS(on) and QG (gate charge). Low intrinsic gate resistance. Industry standard packages. Low package inductance. High power density
Channel Type = N
Maximum Continuous Drain Current = 50 A
Maximum Drain Source Voltage = 500 V
Maximum Drain Source Resistance = 125 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH50N50P3 8024385P
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
IDSS 50000 milliamps
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