The IXFH50N50P3 is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, motor drives, and laser drivers. It is packaged in a TO-247 case with a weight of 6.0 g and features an avalanche-rated structure and a fast intrinsic rectifier. The device has a drain-source voltage rating of 500 V, a continuous drain current of 50 A at 25°C, and a maximum on-state resistance of 125 mΩ at 10 V gate drive. It supports a peak drain current of 150 A under pulse conditions and has an avalanche energy rating of 500 mJ. Thermal resistance junction-to-case is 0.13 °C/W. The part meets IEC 60286-3 and RoHS standards, and operates over a junction temperature range of -55°C to 150°C.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH50N50P3 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar3™ - IXFH50N50P3 |
| Polarity | N-Channel |
