Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH230N075T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Datasheet
Datasheet Summary
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The IXFH230N075T2 is an N-channel enhancement mode MOSFET designed for high-current switching applications, featuring a 75 V drain-to-source voltage rating and a continuous drain current of 230 A at 25°C. It is packaged in a TO-247 case with a weight of 6 g and operates over a junction temperature range of -55°C to 175°C. The device has a maximum on-resistance of 4.2 mΩ at 10 V gate-source voltage and 50 A drain current, and includes a fast intrinsic rectifier. It is avalanche-rated with an energy rating of 850 mJ and meets the AEC-Q200 automotive qualification standard. Thermal resistance from junction to case is 0.31 °C/W.

Datasheet Summary
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The IXFH230N075T2 is an N-channel enhancement mode MOSFET designed for high-current switching applications, featuring a 75 V drain-to-source voltage rating and a continuous drain current of 230 A at 25°C. It is packaged in a TO-247 case with a weight of 6 g and operates over a junction temperature range of -55°C to 175°C. The device has a maximum on-resistance of 4.2 mΩ at 10 V gate-source voltage and 50 A drain current, and includes a fast intrinsic rectifier. It is avalanche-rated with an energy rating of 850 mJ and meets the AEC-Q200 automotive qualification standard. Thermal resistance from junction to case is 0.31 °C/W.

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40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH230N075T2 - Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFH230N075T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH230N075T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFH230N075T2
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
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