Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA36N20X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Request a Quote
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFA36N20X3 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab and measures 2.50 g. The device has a maximum drain-source voltage of 200 V and a continuous drain current rating of 36 A at 25°C. Its maximum on-state resistance is 45 mΩ at 10 V gate-source voltage and 50% of rated current, with an avalanche energy rating of 300 mJ. It is rated for junction temperatures from -55°C to 150°C, with a maximum lead temperature of 300°C for soldering. The device is avalanche-rated, has low package inductance, and meets international standard package dimensions.

Datasheet Summary
Powered by GS/AI

The IXFA36N20X3 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab and measures 2.50 g. The device has a maximum drain-source voltage of 200 V and a continuous drain current rating of 36 A at 25°C. Its maximum on-state resistance is 45 mΩ at 10 V gate-source voltage and 50% of rated current, with an avalanche energy rating of 300 mJ. It is rated for junction temperatures from -55°C to 150°C, with a maximum lead temperature of 300°C for soldering. The device is avalanche-rated, has low package inductance, and meets international standard package dimensions.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA36N20X3 - Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFA36N20X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA36N20X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Singapore, Singapore
200V 36A MOSFET Transistor
278-IXFA36N20X3
200V 36A MOSFET Transistor 278-IXFA36N20X3
Trans MOSFET N-CH 200V 36A 3-Pin(2+Tab) D2PAK Product overview: IXFA36N20X3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA36N20X3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 200V 36A 3-Pin(2+Tab) D2PAK Product overview: IXFA36N20X3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA36N20X3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA36N20X3 278-IXFA36N20X3
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options 200V 36A MOSFET Transistor
Polarity N-Channel
Package Type TO-263; TO-263
MOSFET Operating Mode Enhancement
Unlock Full Specs
to access all available technical data

Similar Products

CSD19503KCS 80V, 7.6mOhm, N-Channel TO-220 NexFET™ Power MOSFET - CSD19503KCS - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 80 volts
IDSS 113000 milliamps
View Details
7 suppliers
Advanced Linear Devices, Inc.
View Details