Littelfuse, Inc. 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH42N170

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
  • 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBH42N170 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Transistor - 62438518 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBH42N170 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
IXBH42N170
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH42N170
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 170V 42A IGBT Transistor
279-IXBH42N170
N-Channel 170V 42A IGBT Transistor 279-IXBH42N170
IGBT, 170V, 42A, N-Channel Product overview: IXBH42N170 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 170V, 42A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 170V, 42A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBH42N170 can be used for catalog matching and distributor lookup.

IGBT, 170V, 42A, N-Channel Product overview: IXBH42N170 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 170V, 42A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 170V, 42A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBH42N170 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 62438518 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
62438518
Transistor 62438518
TRANSISTOR, INSULATED GATE BIPOLAR TRANSISTOR, 80A, 1700V, N-CHANNEL, TO-247AD, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, INSULATED GATE BIPOLAR TRANSISTOR, 80A, 1700V, N-CHANNEL, TO-247AD, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Radwell International
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors
Product Number IXBH42N170 279-IXBH42N170 62438518
Product Name 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs N-Channel 170V 42A IGBT Transistor Transistor
VCES 1700 volts
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