The IXBX55N300 is a 3000V monolithic bipolar MOS transistor in a TO-264 package, designed for high-voltage switching applications such as uninterruptible power supplies, resonant-mode power supplies, and capacitor discharge circuits. It handles a continuous collector current of 55A at 110°C and a peak pulsed current of 600A. The device has a collector-emitter saturation voltage of 2.7V to 3.3V, a thermal resistance junction-to-case of 0.20 °C/W, and operates with a junction temperature range of -55°C to 150°C. It features a MOS gate for simplified drive circuitry, an intrinsic reverse diode with a forward voltage of 2.5V, and is rated for clamped inductive load switching up to 1500V. The part is packaged in an international standard TO-264 form factor and meets RoHS compliance standards.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
Insulated Gate Bipolar Transistor, Product overview: IXBX55N300 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBX55N300 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBX55N300 | 279-IXBX55N300 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs | IGBT Transistor |
| VCES | 3000 volts |
