The IXDH20N120D1 is a 1200 V, 38 A NPT IGBT with an integrated ultrafast diode, housed in a TO-247 AD package measuring 21.46 mm in length, 16.26 mm in width, and 5.72 mm in height. It features a typical collector-emitter saturation voltage of 2.4 V at 20 A and 15 V gate-emitter bias, a square reverse-bias safe operating area (RBSOA) supporting 35 A at 125°C, and a thermal resistance from junction to case of 0.63 K/W for the IGBT and 1.6 K/W for the diode. The device meets international standard package requirements and is designed for applications such as AC motor control, DC servo drives, and uninteruptible power supplies.
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXDH20N120D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDH20N120D1 |
| VCES | 1200 volts |
