The IXBF9N160G is a high-voltage BIMOSFET designed for switched-mode power supplies, DC-DC and resonant converters, lamp ballasts, and laser or X-ray generators. It is packaged in the ISOPLUS i4-PAC™ format with a footprint of 7 mm between pins 2 and 5 and a height of 5.5 mm from pin to backside metal, weighing 9 g. The device blocks up to 1600 V and conducts a continuous current of 7 A at 25°C, with a saturation voltage of 4.9 V at 5 A and 15 V gate drive. It features a clamped inductive safe operating area of 0.8·V_{CES}, a turn-off delay time of 200 ns, and gate charge of 34 nC. Thermal resistance junction-to-case is 1.75 K/W, and it meets AEC-Q200 and RoHS standards.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBF9N160G |
| Product Name | Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: High Voltage - IXBF9N160G |
| VCES | 1600 volts |
