The IXFA16N50P3 is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It comes in a TO-263 package, weighing 2.5 g, with a drain-source voltage rating of 500 V and a continuous drain current of 16 A at 25°C. The device has a maximum on-state resistance of 360 mΩ at VGS = 10 V and ID = 8 A, and is avalanche rated with an energy rating of 300 mJ. It features a fast intrinsic rectifier, low gate charge of 29 nC, and low package inductance. The gate-source voltage is limited to ±30 V continuous and ±40 V transient. The junction temperature range is -55°C to +150°C, with a thermal resistance from junction to case of 0.38 °C/W.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA16N50P3 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
