The IXD2012N is a high-side and low-side gate driver designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration. It operates with a floating high-side supply voltage up to 200 V in bootstrap mode and provides 1.9 A source and 2.3 A sink output current. The device accepts TTL and CMOS logic inputs compatible with 3.3 V signals and operates with a low-side supply voltage of 10 V to 20 V. It features integrated cross-conduction protection and under voltage lockout for both high-side and low-side drivers. The IXD2012N is packaged in an SOIC(N)-8 case and operates over an ambient temperature range of -40 °C to +125 °C. It meets the MSL 3 moisture sensitivity classification and is ESD sensitive per JESD-625.
The IXD2012NTR is a 200 V, high-speed gate driver with high-side and low-side outputs, designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration. The IXD2012NTR logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, to interface easily with controlling devices. The driver outputs feature high pulse current buffers that are designed for minimum driver cross conduction. 200 VDC floating high-side voltage capability 1.9 A source / 2.3 A sink gate drive capability +10 V to +20 V VCC supply voltage range TTL / CMOS compatible logic inputs −40 ºC to +125 ºC operating temperature range
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXD2012N |
| Product Name | Floating high-side driver enables bootstrap operation to 600V |
| tr | 30 ns |
