The IXFB210N20P is an N-channel enhancement mode MOSFET designed for high-current switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It is packaged in a PLUS264 package, weighs 10 g, and features a drain-source voltage rating of 200 V, continuous drain current of 210 A at 25°C, and a maximum RDS(on) of 10.5 mΩ. The device is avalanche rated, includes a fast intrinsic diode with reverse recovery time of 200 ns, and supports a peak pulsed drain current of 600 A. Thermal resistance from junction to case is 0.10 °C/W, and the operating junction temperature ranges from -55°C to 175°C. It meets AEC-Q200 and RoHS standards.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB210N20P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
