The IXFB80N50Q2 is a 500 V N-channel enhancement mode MOSFET in a PLUS264 package, designed for high-frequency switched-mode and resonant-mode power supplies. It has a continuous drain current rating of 80 A at 25 °C and a drain-source on-resistance of 60 mΩ at 10 V gate voltage. The device is avalanche rated with single-pulse energy absorption of 60 mJ and an energy absorption limit of 5.0 J, featuring a fast intrinsic rectifier with a reverse recovery time of 250 ns. It supports a maximum drain-to-source dV/dt of 20 V/ns and has a thermal resistance from junction to case of 0.13 °C/W. The package is rated for operation from -55 °C to 150 °C junction temperature. The part is RoHS compliant and rated for unclamped inductive switching (UIS).
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB80N50Q2 |
| Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
