The IXBN42N170A is a high-voltage bipolar MOS transistor packaged in an SOT-227B miniBLOC case, rated for a collector-emitter voltage of 1700 V and a continuous collector current of 21 A at 90°C. It features a clampable safe operating area of 1360 V under inductive load, a low on-state collector-emitter saturation voltage of 5.2 to 6.0 V, and an isolation voltage of 2500 V~. The device integrates an anti-parallel diode and operates with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 0.40 °C/W, and mounting torque is specified at 1.5 Nm. It is designed for switch-mode and resonant-mode power supplies, UPS, AC motor drives, and capacitor discharge circuits.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBN42N170A |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
