The IXFH67N10 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, synchronous rectification, and AC motor control. It is packaged in a TO-247 AD case, measuring 20.32 mm maximum width and 19.81 mm minimum body length. It has a drain-source breakdown voltage of 100 V, a continuous drain current of 67 A at 25 °C, and a maximum drain-source on-resistance of 25 mΩ at 10 V gate voltage. The device supports an unclamped inductive switching energy of 30 mJ and has a thermal resistance from junction to case of 0.42 K/W. It is rated for operation from -55 °C to 150 °C and meets international standard package requirements with an isolated mounting screw hole. The device features a fast intrinsic rectifier, low package inductance, and rugged polysilicon gate cell structure.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH67N10 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFH67N10 |
| Polarity | N-Channel |
