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Littelfuse, Inc. 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N50P2

Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Features: Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Applications: SMPS/RMPS, UPS, PFC, DC-DC converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control
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500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH52N50P2 - Littelfuse, Inc.
Chicago, IL, United States
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH52N50P2
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N50P2
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Features: Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Applications: SMPS/RMPS, UPS, PFC, DC-DC converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control

Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Features: Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Applications: SMPS/RMPS, UPS, PFC, DC-DC converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control

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Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH52N50P2
Product Name 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
V(BR)DSS 500 volts
IDSS 52000 milliamps
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