Littelfuse, Inc. 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N50P2

Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
  • 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH52N50P2 - Littelfuse, Inc.
    Littelfuse, Inc.
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Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated
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Suppliers

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Product
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Supplier Links
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH52N50P2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH52N50P2
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH52N50P2
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated

Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 52A 500V 0.12ohm MOSFET Transistor
278-IXFH52N50P2
N-Channel 52A 500V 0.12ohm MOSFET Transistor 278-IXFH52N50P2
Power Field-Effect Transistor, 52A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Product overview: IXFH52N50P2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 52A, 500V, 0.12ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 52A, 500V, 0.12ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH52N50P2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 52A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Product overview: IXFH52N50P2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 52A, 500V, 0.12ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 52A, 500V, 0.12ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH52N50P2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH52N50P2 278-IXFH52N50P2
Product Name 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 52A 500V 0.12ohm MOSFET Transistor
Polarity N-Channel
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