Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH69N30P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH69N30P is an N-channel enhancement mode power MOSFET in a TO-247 package, designed for high-speed switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It has a drain-source voltage rating of 300 V, a continuous drain current of 69 A at 25°C, and a maximum drain-source on-resistance of 49 mΩ at 10 V gate-source voltage. The device is avalanche rated, features a fast intrinsic diode with a reverse recovery time up to 200 ns, and has a maximum power dissipation of 500 W. Its thermal resistance from junction to case is 0.21 °C/W. The package weighs 6 g and meets international standard dimensions.

Datasheet Summary
Powered by GS/AI

The IXFH69N30P is an N-channel enhancement mode power MOSFET in a TO-247 package, designed for high-speed switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It has a drain-source voltage rating of 300 V, a continuous drain current of 69 A at 25°C, and a maximum drain-source on-resistance of 49 mΩ at 10 V gate-source voltage. The device is avalanche rated, features a fast intrinsic diode with a reverse recovery time up to 200 ns, and has a maximum power dissipation of 500 W. Its thermal resistance from junction to case is 0.21 °C/W. The package weighs 6 g and meets international standard dimensions.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH69N30P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH69N30P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH69N30P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 69A 300V 0.049ohm MOSFET Transistor
278-IXFH69N30P
N-Channel 69A 300V 0.049ohm MOSFET Transistor 278-IXFH69N30P
Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH69N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 69A, 300V, 0.049ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 69A, 300V, 0.049ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH69N30P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH69N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 69A, 300V, 0.049ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 69A, 300V, 0.049ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH69N30P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH69N30P 278-IXFH69N30P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 69A 300V 0.049ohm MOSFET Transistor
Polarity N-Channel
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