The IXBH6N170 is a high-voltage Bipolar MOS Transistor (BiMOSFET) designed for switched-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It is packaged in a TO-247 case with dimensions of 20.32 mm length, 16.26 mm width, and 5.72 mm height. The device has a maximum collector-emitter voltage of 1700 V and a continuous collector current of 6 A at 90°C. It features an integrated anti-parallel diode with a forward voltage up to 3.0 V and a reverse recovery time of 1.08 µs. Thermal resistance from junction to case is 1.65 °C/W, and the operating junction temperature range is -55°C to 150°C. The part meets international standard package specifications and is rated for a maximum collector power dissipation of 75 W at 25°C.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBH6N170 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
