Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH20N100P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH20N100P is an N-channel enhancement mode MOSFET in a TO-247 package, rated for 1000 V drain-source breakdown voltage and 20 A continuous drain current at 25°C. It features a maximum on-resistance of 570 mΩ at VGS = 10 V and ID = 10 A, and an avalanche energy rating of 800 mJ. The device includes a fast intrinsic diode with reverse recovery time of 300 ns and is rated for unclamped inductive switching. It operates with a junction temperature range of -55°C to 150°C and has a thermal resistance of 0.19 °C/W from junction to case. The package complies with international standards, has low inductance, and is rated for pulse widths up to 300 µs at a 2% duty cycle. It meets AEC-Q200 and RoHS standards.

Datasheet Summary
Powered by GS/AI

The IXFH20N100P is an N-channel enhancement mode MOSFET in a TO-247 package, rated for 1000 V drain-source breakdown voltage and 20 A continuous drain current at 25°C. It features a maximum on-resistance of 570 mΩ at VGS = 10 V and ID = 10 A, and an avalanche energy rating of 800 mJ. The device includes a fast intrinsic diode with reverse recovery time of 300 ns and is rated for unclamped inductive switching. It operates with a junction temperature range of -55°C to 150°C and has a thermal resistance of 0.19 °C/W from junction to case. The package complies with international standards, has low inductance, and is rated for pulse widths up to 300 µs at a 2% duty cycle. It meets AEC-Q200 and RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH20N100P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH20N100P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH20N100P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 20A 1000V 0.57ohm MOSFET Transistor
278-IXFH20N100P
N-Channel 20A 1000V 0.57ohm MOSFET Transistor 278-IXFH20N100P
Power Field-Effect Transistor, 20A I(D), 1000V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Product overview: IXFH20N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 1000V, 0.57ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20A, 1000V, 0.57ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH20N100P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 20A I(D), 1000V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Product overview: IXFH20N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 1000V, 0.57ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20A, 1000V, 0.57ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH20N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH20N100P 278-IXFH20N100P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 20A 1000V 0.57ohm MOSFET Transistor
Polarity N-Channel
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