The IXFB82N60Q3 is an N-channel enhancement mode Power MOSFET with a 600 V drain-to-source voltage rating and 82 A continuous drain current, designed for high-power switching applications such as DC-DC converters, battery chargers, and switch-mode power supplies. It is packaged in a PLUS264TM case with a weight of 10 g and features a fast intrinsic rectifier, low on-resistance of 75 mΩ, and low gate charge. The device meets AEC-Q200 standards, has a maximum junction temperature of 150 °C, and a thermal resistance of 0.08 °C/W from junction to case. It supports a transient dv/dt rating of 50 V/ns and has a repetitive avalanche energy rating of 4 J.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB82N60Q3 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
