The IXBH24N170 is a 1700 V, 24 A bipolar MOS transistor designed for high-power switching applications such as switch-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It is packaged in a TO-247 case, measuring 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and 4.32 to 5.49 mm in terminal height. The device has a maximum collector current of 24 A at 110°C, a collector-emitter saturation voltage of 2.5 V at 25°C (2.4 V at 125°C), and a thermal resistance from junction to case of 0.21 °C/W. It operates with a gate-emitter voltage range of ±20 V continuous and ±30 V transient, and supports a junction temperature range of -55 to 150°C. The part meets international standard packaging requirements and features low conduction losses and low gate drive requirements.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBH24N170 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
