Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXA70I1200NA

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Datasheet
Datasheet Summary
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The IXA70I1200NA is a single XPT IGBT designed for AC motor drives, solar inverters, and switched-mode power supplies. It is packaged in an industry-standard SOT-227B (minibloc) with a copper base plate and internal DCB isolation. The device has a collector-emitter voltage rating of 1200 V, a continuous collector current of 100 A at 25°C, and a collector-emitter saturation voltage of 1.8 V at 50 A and 25°C. It features a positive temperature coefficient for easy paralleling, a short-circuit withstand time of 10 µs, and a low total gate charge of 190 nC. The package meets UL 94 V-0 flammability requirements, is RoHS compliant, and supports an isolation voltage of 3000 V~. Thermal resistance from junction to case is 0.35 K/W, and operating temperature ranges from -40°C to 125°C.

Datasheet Summary
Powered by GS/AI

The IXA70I1200NA is a single XPT IGBT designed for AC motor drives, solar inverters, and switched-mode power supplies. It is packaged in an industry-standard SOT-227B (minibloc) with a copper base plate and internal DCB isolation. The device has a collector-emitter voltage rating of 1200 V, a continuous collector current of 100 A at 25°C, and a collector-emitter saturation voltage of 1.8 V at 50 A and 25°C. It features a positive temperature coefficient for easy paralleling, a short-circuit withstand time of 10 µs, and a low total gate charge of 190 nC. The package meets UL 94 V-0 flammability requirements, is RoHS compliant, and supports an isolation voltage of 3000 V~. Thermal resistance from junction to case is 0.35 K/W, and operating temperature ranges from -40°C to 125°C.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXA70I1200NA - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXA70I1200NA
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXA70I1200NA
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
IGBTs - 8047625 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
8047625
IGBTs 8047625
IGBT N-Ch 1200V 100A XPT SOT227B

IGBT N-Ch 1200V 100A XPT SOT227B

Supplier's Site
IGBTs - 1684763 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1684763
IGBTs 1684763
IGBT N-Ch 1200V 100A XPT SOT227B

IGBT N-Ch 1200V 100A XPT SOT227B

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXA70I1200NA 8047625
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBTs
VCES 1200 volts
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