The IXFH20N60 is an N-channel enhancement mode Power MOSFET designed for high-efficiency switching applications such as DC-DC converters, synchronous rectification, and AC motor control. It is packaged in a TO-247 AD case measuring 20.32 mm x 19.81 mm x 5.49 mm, with a mounting torque of 1.13 Nm and a weight of 6 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current of 20 A at 25°C, and a maximum pulsed drain current of 80 A. Its on-state resistance is 0.35 Ω at 10 V gate voltage and 25°C. It features a fast intrinsic rectifier with a reverse recovery time of 250 ns at 25°C, and an avalanche energy rating of 30 mJ. The package supports isolated mounting via a single screw, and has low inductance and high power density. The junction operating temperature ranges from -55°C to 150°C.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH20N60 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
